SBL4030PT & SBL4040PT
Vishay General Semiconductor
Document Number: 88733
Revision: 25-Mar-08
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3
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Characteristics Per Diode
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
Instantaneo
u
s For
w
ard C
u
rrent (A)
TJ
= 100 °C
TJ
= 25 °C
0
20
40
60
80
100
0.001
0.01
0.1
1
10
100
TJ
= 100 °C
TJ
= 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s Re
v
erse C
u
rrent (mA)
Figure 5. Typical Junction Capacitance Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
0.1
1
10
100
100
1000
10 000
Reverse Voltage (V)
J
u
nction Capaci
tance (pF)
TJ
= 25 °C
f = 1.0 MHz
Vsig
= 50 m
Vp-p
0.01
0.1
1
10
100
0.1
1
10
100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/
W
)
PIN
1
PIN
3
CASE
PIN
2
TO-247AD (TO-3P)
0.245 (6.2)
0.225 (5.7)
0.645 (16.4)
0.625 (15.9)
0.323 (8.2)
0.313 (7.9)
0.142 (3.6)
0.138
(3.5)
0.170 (4.3)
0.086 (2.18)
0.076 (1.93)
0.160 (4.1)
0.140 (3.5)
0.225 (5.7)
0.205 (5.2)
0.127 (3.22)
0.117 (2.97)
0.048
(1.22)
0.044 (1.12)
0.795 (20.2)
0.775 (19.6)
0.840 (21.3)
0.820 (20.8)
1
2
3
0.078
(1.9
8) REF.
0.203 (5.16)
0.193 (4.90)
10° TYP.
Both Sides
30°
10
1° REF.
Both Sides
0.030 (0.76)
0.020 (0.51)
0.118
(3.0)
0.108
(2.7)
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